GaS (alpha phase Gallium sulfide)

GaS Gallium Sulfide GaS (alpha phase) is a semiconductor with an indirect band gap of ~2.6 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. α-GaS belongs to the group-13 post-transition metal monochalcogenides.

The Gallium sulfide crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm. The crystals are yellow colored and transparent.

GaS crystal properties
Crystal size ~10 mm
Electrical properties Semiconductor
Crystal structure Hexagonal
Unit cell parameters a = 0.360, b = 0.640 nm, c = 1.544 nm, α = β = 90°, γ = 120°
Type Synthetic
Purity >99.995 %
Characterized by XRD, Raman, EDX
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The single crystal GaS is characterized using:

XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
Raman: 785 nm Raman system

Raman, XRD and EDX on GaS:

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X-ray diffraction on a GaS single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10, 12, 14

Powder X-ray diffraction (XRD) of a single crystal GaS. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal alpha phase GaS by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal GaS. Measurement was performed with a 785 nm Raman system at room temperature.

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GaS (Gallium sulfide)

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